The Single Dopant Diffusion in Arbitrary Space Dimension

Local Existence Result of the Single Dopant Diffusion including Cluster Reactions of High Order

We consider the pair diffusion process which includes cluster reactions of high order. We are able to prove a local (in time) existence result in arbitrary space dimensions. The model includes a nonlinear system of reaction-drift-diffusion equations, a nonlinear system of ordinary differential equations in Banach spaces, and a nonlinear elliptic equation for the electrochemical potential. The l...

Local Existence Result of the Single Dopant Diffusionin Arbitrary Space Dimensions

Modeling of Manufacturing of Field-Effect Heterotransistors without P-n-junctions to Optimize Decreasing their Dimensions

It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...

Local Existence Result of the Dopant Diffusion in Arbitrary Space Dimensions

In this paper we consider the pair diffusion process in more than two spatial dimensions. In this case we are able to prove just a local existence result, since it is not possible to deduce global a priori estimates for the equations as it can be done in the two-dimensional case. The model includes a nonlinear system of reaction-drift-diffusion equations, a nonlinear ordinary differential equat...

Implementation of EIS for dopant profile analysis in n-type silicon

An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and a...